a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 specifications are subjec t to change without notice. characteristics t c = 25 c symbol none test conditions minimum typical maximum units bv cbo i c = 1.0 ma 45 v bv cer i c = 5.0 ma r be = 10 ? 45 v bv ebo i e = 1.0 ma 3.5 v i cbo v cb = 28 v 0.5 ma h fe v ce = 5.0 v i c = 100 ma 15 120 --- c ob v cb = 18 v f = 1.0 mhz 3.2 pf p out c g p v ce = 18 v p in = 0.2 w f = 1.0 ghz 2.0 50 10 2.2 55 10.4 w % db npn silicon rf power transistor MSC81090 description: the asi MSC81090 is designed for general purpose class a power amplifier applications from 0.4 - 1.2 ghz. features: ? p g = 10 db min. at 2.0 w/ 1.0 ghz ? hermetically sealed package ? omnigold ? metalization system ? emitter ballasted maximum ratings i c 200 a v cc 35 v p diss 6.25 w @ t c 75 c t j -65 c to +200 c t stg -65 c to +200 c jc 20 c/w package style .230 4l stud common emitter
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